 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| SUU50N03-12P Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 D TrenchFETr Power MOSFET ID (A)a 17.5 14.5 rDS(on) () 0.012 @ VGS = 10 V 0.0175 @ VGS = 4.5 V APPLICATIONS D DC/DC Converters D Synchronous Rectifiers TO-251 D G and DRAIN-TAB GDS Top View Order Number: SUU50N03-12P S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Currenta Pulsed Drain Current Continuous Source Current (Diode Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipation Operating Junction and Storage Temperature Range L = 0.1 mH 01 TC = 25_C TA = 25_C PD TJ, Tstg Conduction)a TA = 25_C TA = 100_C ID IDM IS IAS EAS Symbol VDS VGS Limit 30 20 17.5 12.4 40 5 30 45 46.8 6.5a --55 to 175 Unit V A mJ W _C THERMAL RESISTANCE RATINGS Parameter Maximum Junction to Ambienta Junction-to-Ambient Maximum Junction-to-Case Notes a. Surface Mounted on FR4 Board, t 10 sec. Document Number: 72429 S-31872--Rev. A, 15-Sep-03 www.vishay.com t 10 sec Steady State Symbol RthJA RthJC Typical 18 40 2.6 Maximum 23 50 3.2 Unit _C/W C/ 1 SUU50N03-12P Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currentb Drain Source On-State Drain-Source On State Resistanceb Forward Transconductanceb V(BR)DSS VGS(th) IGSS IDSS ID(on) rDS(on) gfs VGS = 0 V, ID = 250 mA VDS = VGS, ID = 250 mA VDS = 0 V, VGS = 20 V VDS = 24 V, VGS = 0 V VDS = 24 V, VGS = 0 V, TJ = 125_C VDS = 5 V, VGS = 10 V VGS = 10 V, ID = 20 A VGS = 10 V, ID = 20 A, TJ = 125_C VGS = 4.5 V, ID = 15 A VDS = 15 V, ID = 20 A 15 0.0138 40 0.010 0.012 0.017 0.0175 S 30 1.0 3.0 100 1 50 V nA mA A Symbol Test Condition Min Typa Max Unit Dynamica Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Chargec Gate-Source Chargec Gate-Drain Chargec Turn-On Delay Timec Rise Timec Turn-Off Delay Timec Fall Timec Ciss Coss Crss Rg Qg Qgs Qgd td(on) tr td(off) tf VDD = 15 V, RL = 0.3 ID 50 A, VGEN = 10 V, Rg = 2.5 VDS = 15 V, VGS = 10 V, ID = 50 A 5, 0, VGS = 0 V, VDS = 25 V, f = 1 MHz 1600 285 140 1.5 28 6.0 5.0 9 15 20 12 15 25 30 20 ns 42 nC C p pF Source-Drain Diode Ratings and Characteristic (TC = 25_C) Pulsed Current Diode Forward Voltageb Source-Drain Reverse Recovery Time ISM VSD trr IF = 40 A, VGS = 0 V IF = 50 A, di/dt = 100 A/ms 1.2 25 100 1.5 70 A V ns Notes a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width 300 ms, duty cycle 2%. c. Independent of operating temperature. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 80 80 Transfer Characteristics VGS = 10 thru 5 V 60 I D -- Drain Current (A) I D -- Drain Current (A) 60 40 4V 40 TC = 125_C 20 25_C 20 3V 0 0 1 2 3 4 5 0 0 1 2 3 --55_C 4 5 6 VDS -- Drain-to-Source Voltage (V) www.vishay.com VGS -- Gate-to-Source Voltage (V) Document Number: 72429 S-31872--Rev. A, 15-Sep-03 2 SUU50N03-12P Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Transconductance 80 TC = --55_C r DS(on)-- On-Resistance ( ) g fs -- Transconductance (S) 0.04 0.05 On-Resistance vs. Drain Current 60 25_C 125_C 40 0.03 0.02 VGS = 4.5 V VGS = 10 V 20 0.01 0 0 10 20 30 40 50 0.00 0 20 40 ID -- Drain Current (A) 60 80 ID -- Drain Current (A) Capacitance 2500 10 Gate Charge 2000 C -- Capacitance (pF) Ciss 1500 V GS -- Gate-to-Source Voltage (V) 8 VDS = 15 V ID = 50 A 6 1000 4 500 Crss 0 0 5 10 15 Coss 2 0 20 25 30 0 6 12 18 24 30 VDS -- Drain-to-Source Voltage (V) Qg -- Total Gate Charge (nC) On-Resistance vs. Junction Temperature 1.8 VGS = 10 V ID = 15 A I S -- Source Current (A) 100 Source-Drain Diode Forward Voltage 1.6 r DS(on)-- On-Resistance ( ) (Normalized) 1.4 TJ = 150_C 10 TJ = 25_C 1.2 1.0 0.8 0.6 --50 1 --25 0 25 50 75 100 125 150 175 0 0.3 0.6 0.9 1.2 1.5 TJ -- Junction Temperature (_C) VSD -- Source-to-Drain Voltage (V) Document Number: 72429 S-31872--Rev. A, 15-Sep-03 www.vishay.com 3 SUU50N03-12P Vishay Siliconix THERMAL RATINGS Maximum Drain Current vs. Ambiemt Temperature 20 1000 Safe Operating Area 16 I D -- Drain Current (A) I D -- Drain Current (A) 100 Limited by rDS(on) 10, 100 ms 12 10 1 ms 10 ms 8 1 100 ms 1s 4 0.1 TA = 25_C Single Pulse 10 s dc, 100 s 0 0 25 50 75 100 125 150 175 0.01 0.1 1 10 100 TA -- Ambient Temperature (_C) VDS -- Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.02 0.05 Single Pulse 0.01 10 --4 10 --3 10 --2 10 --1 1 10 100 1000 Square Wave Pulse Duration (sec) Normalized Thermal Transient Impedance, Junction-to-Case 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.02 0.05 Single Pulse 0.01 10 --4 10 --3 10 --2 10 --1 Square Wave Pulse Duration (sec) 1 10 100 www.vishay.com 4 Document Number: 72429 S-31872--Rev. A, 15-Sep-03 |
Price & Availability of SUU50N03-12P
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |